Paper Recommendation
1970 Accommodation of Misfit Across The interface Between Crystals of Semiconducting Elements Or Compounds

1983 Resonant Tunneling Through Quantum Wells at Frequencies Up To 2.5 THz

1982 Semiconducting and Other Major Properties of Gallium Arsenide

1996 (Ga,Mn)As: A New Diluted Magnetic Semiconductor Based on GaAs

1983 1.54‐μm Luminescence of Erbium‐implanted III‐V Semiconductors and Silicon

1985 Optical Bistability : Controlling Light With Light

1981 Disorder of An AlAs‐GaAs Superlattice By Impurity Diffusion

1979 X‐ray Total‐external‐reflection–Bragg Diffraction: A Structural Study of The GaAs‐Al interface

1982 Strained‐layer Superlattices From Lattice Mismatched Materials

1982 Toward Quantum Well Wires: Fabrication and Optical Properties

1988 Long Wavelength Semiconductor Lasers

1982 Material Parameters of in1−xGaxAsyP1−y and Related Binaries

1982 Large Room‐temperature Optical Nonlinearity in GaAs/Ga1−x AlxAs Multiple Quantum Well Structures

1961 A Method For The Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors

1954 Some Properties of Gallium Arsenide

1994 Low Threshold, Large T O injection Laser Emission From (InGa)As Quantum Dots

1996 High Power Mid‐infrared (λ∼5 μm) Quantum Cascade Lasers Operating Above Room Temperature

1983 Deposition of GaAs Epitaxial Layers By Organometallic CVD Temperature and Orientation Dependence

1983 Recent Progress on LADA Growth of HgCdTe and CdTe Epitaxial Layers

1982 Magnetic Properties of Single‐crystal {110} Iron Films Grown on GaAs By Molecular Beam Epitaxy (invited)