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Seijiro Furukawa
HIndex: 16
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Transformational grammar
Transmission electron microscopy
Ion channel
Generally Accepted Auditing Standards
Surface modification
Molecular beam epitaxy
Single crystal
Fluorine
Ion implantation
Room temperature
Crystal structure
Silicon
Crystallization
Fabrication
Thermal stability
Crystal growth
Phosphorus
Cathode ray
Microstructure
Electron diffraction
Amorphous solid
Heterojunction
Gallium arsenide
Thin film
Epitaxy
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Transformational grammar
Transmission electron microscopy
Ion channel
Generally Accepted Auditing Standards
Surface modification
Molecular beam epitaxy
Single crystal
Fluorine
Ion implantation
Room temperature
Crystal structure
Silicon
Crystallization
Fabrication
Thermal stability
Crystal growth
Phosphorus
Cathode ray
Microstructure
Electron diffraction
Amorphous solid
Heterojunction
Gallium arsenide
Thin film
Epitaxy
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Affiliation
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Seijiro Furukawa
Tokyo Institute Of Technology
140
Seijiro Furukawa
Tokyo Institute Of Technology
12
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