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J Washburn
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Interface
Dislocation
Physical property
Ion implantation
Microstructure
Transmission electron microscopy
Periodic Table
Arsenic
Morphology
Chemical reaction
Thin film
Electron microscope
Schottky diode
Layers
Gallium arsenide
Crystallographic defect
Gold
Metal
Annealing
Microscopy
Semiconductor device
Molecular beam epitaxy
Nitrogen
Aluminium
Materials Science
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Interface
Dislocation
Physical property
Ion implantation
Microstructure
Transmission electron microscopy
Periodic Table
Arsenic
Morphology
Chemical reaction
Thin film
Electron microscope
Schottky diode
Layers
Gallium arsenide
Crystallographic defect
Gold
Metal
Annealing
Microscopy
Semiconductor device
Molecular beam epitaxy
Nitrogen
Aluminium
Materials Science
Paper Recommendation
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Match this author profile with one of the following researchers:
Author Name
Affiliation
Papers
J Washburn
Lawrence Berkeley National Laboratory
36
J Washburn
Technology College
35
J Washburn
University Of California
30
J Washburn
Lawrence Berkeley National Laboratory
16
J Washburn
Lawrence Berkeley National Laboratory
7
J Washburn
Lawrence Berkeley National Laboratory
3
J Washburn
Water Resources University
2
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