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J L Merz
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Annealing
Gallium arsenide
Fabry–Pérot interferometer
Ion implantation
Band gap
Waveguide
Binding energy
Quantum efficiency
Magnetic field
Molecular beam epitaxy
Reactive-ion etching
Photoluminescence
Spectrum
Continuous wave
Arsenic
Room temperature
Zinc
Spontaneous emission
Quantum dot
Superlattice
Etching
Integrated circuit
Laser
Quantum well
Ground state
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Annealing
Gallium arsenide
Fabry–Pérot interferometer
Ion implantation
Band gap
Waveguide
Binding energy
Quantum efficiency
Magnetic field
Molecular beam epitaxy
Reactive-ion etching
Photoluminescence
Spectrum
Continuous wave
Arsenic
Room temperature
Zinc
Spontaneous emission
Quantum dot
Superlattice
Etching
Integrated circuit
Laser
Quantum well
Ground state
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J L Merz
University Of California
434
J L Merz
College Of William Mary
4
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