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Huangchung Cheng
HIndex: 15
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Grain growth
Current density
Crystallization
Thin film
Fabrication
Leakage
Field-effect transistor
International System of Units
Field electron emission
Electric field
Sensitivity
Silicon
Electron cyclotron resonance
Logic gate
Annealing
Grain boundary
Breakdown voltage
Thin-film transistor
Dielectric
Molecular beam epitaxy
Transmission electron microscopy
Threshold voltage
Nanowire
Carbon nanotube
Zinc
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Grain growth
Current density
Crystallization
Thin film
Fabrication
Leakage
Field-effect transistor
International System of Units
Field electron emission
Electric field
Sensitivity
Silicon
Electron cyclotron resonance
Logic gate
Annealing
Grain boundary
Breakdown voltage
Thin-film transistor
Dielectric
Molecular beam epitaxy
Transmission electron microscopy
Threshold voltage
Nanowire
Carbon nanotube
Zinc
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Huangchung Cheng
University Of Michigan
303
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