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J L Moll
HIndex: 13
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Redox
Geometry
Charge-carrier density
Equivalent circuit
Telephony
Electrical impedance
Impurity
Etching
Capacitance
Cutoff frequency
Thin-film transistor
Degradation
Conductivity
Copper
Network switch
Crosstalk
Silicon
Electron
Voltage
Frequency
Very-large-scale integration
Temperature
Reliability
Electronics
Semiconductor device modeling
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Redox
Geometry
Charge-carrier density
Equivalent circuit
Telephony
Electrical impedance
Impurity
Etching
Capacitance
Cutoff frequency
Thin-film transistor
Degradation
Conductivity
Copper
Network switch
Crosstalk
Silicon
Electron
Voltage
Frequency
Very-large-scale integration
Temperature
Reliability
Electronics
Semiconductor device modeling
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Match this author profile with one of the following researchers:
Author Name
Affiliation
Papers
J L Moll
Ohio State University
44
J L Moll
Stanford University
18
J L Moll
Bell Labs
11
J L Moll
Department Of Biotechnology
11
J L Moll
University Of Basel
6
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