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Greg P Heuss
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Ruthenium
Argon
Silicon
Thermal stability
Annealing
Electrode
Early Cambrian geochemical fluctuations
Dielectric
Sputtering
Stability
CMOS
Equivalent oxide thickness
Temperature
Schottky barrier
Tantalum
Nitrogen
Silver
Fabrication
Work function
Double layer
X-ray crystallography
International System of Units
Chemical stability
Thin film
Kinetics
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Ruthenium
Argon
Silicon
Thermal stability
Annealing
Electrode
Early Cambrian geochemical fluctuations
Dielectric
Sputtering
Stability
CMOS
Equivalent oxide thickness
Temperature
Schottky barrier
Tantalum
Nitrogen
Silver
Fabrication
Work function
Double layer
X-ray crystallography
International System of Units
Chemical stability
Thin film
Kinetics
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Greg P Heuss
North Carolina State University
18
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