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J M Ballingall
HIndex: 15
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Power-added efficiency
Transmission electron microscopy
Generally Accepted Auditing Standards
Epitaxy
Hall effect
Extremely high frequency
Gallium arsenide
Crystal growth
Molecular beam epitaxy
Noise measurement
Superlattice
Amplifier
Power semiconductor device
Electron diffraction
Field-effect transistor
Noise figure
Cadmium telluride photovoltaics
Electron mobility
Gain
Quantum well
Room temperature
High-electron-mobility transistor
Energy level
High frequency
Frequency
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Power-added efficiency
Transmission electron microscopy
Generally Accepted Auditing Standards
Epitaxy
Hall effect
Extremely high frequency
Gallium arsenide
Crystal growth
Molecular beam epitaxy
Noise measurement
Superlattice
Amplifier
Power semiconductor device
Electron diffraction
Field-effect transistor
Noise figure
Cadmium telluride photovoltaics
Electron mobility
Gain
Quantum well
Room temperature
High-electron-mobility transistor
Energy level
High frequency
Frequency
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J M Ballingall
Syracuse University
91
J M Ballingall
Syracuse University
7
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