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T Conard
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Ozone
Copper
Secondary ion mass spectrometry
Equivalent oxide thickness
Leakage
High-κ dielectric
Threshold voltage
X-ray photoelectron spectroscopy
Nitrogen
Image resolution
Time of flight
CMOS
Thin film
International System of Units
Work function
Tin
Annealing
Atomic layer deposition
Electrode
Thermal stability
Dielectric
Silicon
Redox
Germanium
Transmission electron microscopy
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Ozone
Copper
Secondary ion mass spectrometry
Equivalent oxide thickness
Leakage
High-κ dielectric
Threshold voltage
X-ray photoelectron spectroscopy
Nitrogen
Image resolution
Time of flight
CMOS
Thin film
International System of Units
Work function
Tin
Annealing
Atomic layer deposition
Electrode
Thermal stability
Dielectric
Silicon
Redox
Germanium
Transmission electron microscopy
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T Conard
Katholieke Universiteit Leuven
308
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